This report, Global GaN Devices Market 2016-2020, has been prepared based on an in-depth market analysis with inputs from industry experts. Silicon has been the preferred choice for computing and electronic devices since its invention almost 50 years ago. However, the constant evolution of technology demands high power and ever greater enhancements in the core semiconductor materials to ensure high performance.
GaN has superior properties than silicon such as high breakdown voltage and saturation velocity. The bandgap in GaN is almost thrice the bandgap of silicon. Thus, GaN has the ability to improve power conversion efficiencies, raise power density levels, extend battery lives, and accelerate switching speeds in different end-user segments such as consumer electronics products, telecommunications hardware, electric vehicles, or domestic appliances.
The analysts forecast global GaN devices market to grow at a CAGR of 18.94% during the period 2016-2020. The report covers the present scenario and the growth prospects of the global GaN radio frequency (RF) devices market for 2016-2020. The report considers the use of GaN RF devices in different end-user segments such as cellular infrastructure (telecom towers, base stations, telecom infrastructure, and cellular networks); defense sector (military communications, radar, and electronic warfare); CATV (cable television dishes); and others (medical, satellite communications, broadband amplifiers, wired broadband, and ISM band applications).
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The market is divided into the following segments based on geography:
The report covers the market landscape and its growth prospects over the coming years. The report also includes a discussion of the key vendors operating in this market.
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Key vendors : GAN Systems, Infineon Technologies, NXP Semiconductor, Qorvo, Wolfspeed (Cree)
Other prominent vendors : Ampleon Netherlands B.V., Avago Technologies, Efficient Power Conversion (EPC), Fujitsu Semiconductor, INTEGRA Technologies, MACOM, Microsemi, Northrop Grumman, NTT Advanced Technology Corporation, RFHIC, Sumitomo Electric Device Innovations, ST-Ericsson, Texas Instruments, Toshiba, United Monolithic Semiconductors (UMS), WIN Semiconductors
Market driver : Proliferation of next-generation LTE wireless networks
Market challenge : Requirement for high investment
Market trend : High adoption GaN power amplifiers
Key questions answered in this report
What will the market size be in 2020 and what will the growth rate be?
What are the key market trends?
What is driving this market?
What are the challenges to market growth?
Who are the key vendors in this market space?
What are the market opportunities and threats faced by the key vendors?
What are the strengths and weaknesses of the key vendors?
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