Profile image
By OLED-Info (Reporter)
Contributor profile | More stories
Story Views

Last Hour:
Last 24 Hours:

Graphene solves RRAM’s failure problems

Thursday, December 1, 2016 7:44
% of readers think this story is Fact. Add your two cents.

Resistive RAM (RRAM) is a promising new next-generation memory technology that is being commercialized by several companies. Researchers at the Chinese Academy of Sciences have been study a device failure caused by two processes in cation-based RRAM, and have discovered that graphene may hold the key.

Graphene-enhanced cation-based RRAM (CaS)

If a single-layer graphene is added to the device, and used as an ion barrier between two metallic layers in the device, the RRAM cell is more reliable while still maintaining high performance.


We encourage you to Share our Reports, Analyses, Breaking News and Videos. Simply Click your Favorite Social Media Button and Share.

Report abuse


Your Comments
Question   Razz  Sad   Evil  Exclaim  Smile  Redface  Biggrin  Surprised  Eek   Confused   Cool  LOL   Mad   Twisted  Rolleyes   Wink  Idea  Arrow  Neutral  Cry   Mr. Green

Top Stories
Recent Stories



Top Global


Top Alternative




Email this story
Email this story

If you really want to ban this commenter, please write down the reason:

If you really want to disable all recommended stories, click on OK button. After that, you will be redirect to your options page.