Tuning the Fermi level with topological phase transition by internal strain in a topological insulator Bi2Se3 thin film
Where size matters
DOI: 10.1039/C5NR06086A, Communication
Strain-dependent Bi2Se3 films of various thickness are grown via a self-organized ordering process. As the film thickness decreases from 8 to 2 QL, significant changes of the Fermi level and bandgap were observed. Our results provides an understanding of critical effect on the change in band structure caused by the structural deformation in a topological insulator.
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Source: http://nanochemistry.blogspot.com/2015/12/tuning-fermi-level-with-topological_23.html
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