Germanium Outperforms Silicon in Energy Efficient Transistors
A team of scientists from the Nanoelectronic Materials Laboratory (NaMLab gGmbH) and the Cluster of Excellence Center for Advancing Electronics Dresden (cfaed) at the Dresden University of Technology have demonstrated the world-wide first transistor based on germanium that can be programmed between electron- (n) and hole- (p) conduction.
Transistors based on germanium can be operated at low supply voltages and reduced power consumption, due to the low band gap compared to silicon. Additionally, the realized germanium based transistors can be reconfigured between electron and hole conduction based on the voltage applied to one of the gate electrodes. This enables to realize circuits with lower transistor count compared to state-of-the-art CMOS technologies.
The work has been published in the journal ACS Nano.
The work has been supported by the German Research Foundation (DFG) in the project ReproNano and has been performed in close cooperation with the DFG Cluster of Excellence Center for Advancing Electronics Dresden (cfaed). NaMLab will strive for further implementation in future products as well as further advancement in R&D with its industrial partners.
Contacts and sources:
Technische Universitaet Dresden
Citation: ”Enabling Energy Efficiency and Polarity Control in Germanium Nanowire Transistors by Individually Gated Nanojunctions”, http://pubs.acs.org/doi/abs/10.1021/acsnano.6b07531
Jens Trommer, André Heinzig, Uwe Mühle, Markus Löffler, Annett Winzer, Paul M. Jordan, Jürgen Beister, Tim Baldauf, Marion Geidel, Barbara Adolphi, Ehrenfried Zschech, Thomas Mikolajick, and Walter M. Weber. ACS Nano, Article ASAP DOI: 10.1021/acsnano.6b07531
Publication Date (Web): January 12, 2017 Copyright © 2017 American Chemical Society
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