Inorganic dopants inspire n-type graphene transistor progress
Researchers in India have made graphene field-effect transistors based on discrete inorganic structures that reportedly work for over 10 months. The approach has led them to produce a graphene logic inverter that is stable in ambient conditions.
Conventional electronics are silicon based, due to the ease of doping silicon with either electrons or holes. These two forms of silicon, n- and p-type, are the building blocks of electronic devices. However, it isn’t possible to make silicon electronics on the nanoscale, so many researchers are turning to materials like graphene.
Source: https://www.graphene-info.com/inorganic-dopants-inspire-n-type-graphene-transistor-progress
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