A group of scientists from the National Research University of Electronic Technology – MIET (Russia), Technological Center AIMEN (Spain) and Forschungszentrum Jülich (Germany) has developed an approach for graphene physical and chemical modification avoiding the step of resist deposition, that can be useful for graphene-based electronics technologies.
This work demonstrates the mask-less and resist-free patterning of graphene by two different routes: thermal ablation or oxidative etching. That means that by varying the parameters of laser pulses, chemical tuning (energy gap control) and isolation line patterning is possible in a single process without any chemicals. The same group published the results of graphene oxide reduction by using thermal and chemical effects from laser irradiation. Moreover the laser pulses provide 3D embossing of graphene that open the way for single processing of NEMS and microfluidic-based sensors in graphene.