Silicene production technique may allow transfer-free electronics integration
A new method for silicene production has been reported by researchers from the University of Virginia. The scientists grew the a 2D silicon analogue of graphene by annealing molybdenum disilicide (MoSi2) at relatively low temperatures 650C. The results could have important implications for the adoption of silicene in future electronic devices. Silicine’s band gap means that it is politentially better suited than graphene to create nanoscale semiconductors.
Journal: http://bit.ly/2iIBnFk
2D-Update: http://bit.ly/2gcLy40
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