Hybrid SiC Schottky Rectifier/Si IGBT Modules from GeneSiC enables 175oC operation

Low Inductance, higher temperature capability of Co-packaged mini-modules pushes IGBTs into new applications

Dulles, Virginia., March 5, 2013  – GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of its second generation hybrid mini-modules using 1200 V/100 Amperes SiC Schottky Rectifiers with rugged Silicon IGBTs – the GB100XCP12-227. The performance-price point at which this product is being released allows many power conversion applications to benefit from the reduction of the cost/size/weight/volume that neither Silicon IGBT/ Silicon Rectifier solution, nor a pure SiC Module can offer. These devices are targeted for use in a wide variety of applications including industrial motors, solar inverters, specialized equipment and power grid applications.

SiC Schottky/Si IGBT mini-modules (Co-packs) offered by GeneSiC are made with Si IGBTs that exhibit positive temperature coefficient of on-state drop, robust punchthrough design, high temperature operation and fast switching characteristics that are capable of being driven by commercial, commonly available 15 V IGBT gate drivers. The SiC rectifiers used in these Co-pack modules allow extremely low inductance packages, low on-state voltage drop and no reverse recovery. The SOT-227 package offers isolated baseplate, 12mm low profile design that can be used very flexibly as a standalone circuit element, high current paralleled configuration, a Phase Leg (two modules), or as a chopper circuit element.

“We listened to our key customers since the initial offering of this product almost 2 years back. This second generation 1200 V/100 A Co-pack product has a low inductance design that is suitable for high frequency, high temperature applications. The poor high temperature and reverse recovery characteristics of Silicon diodes critically limits the use of IGBTs at higher temperatures. GeneSiC’s low VF, low capacitance SiC Schottky Diodes enable this breakthrough product” said Dr. Ranbir Singh, President of GeneSiC Semiconductor.

1200 V/100 A Si IGBT/SiC Rectifier Technical Highlights

• On-state Drop of 1.9 V at 100 A
• Positive temperature coefficient on VF
• T_jmax = 175^oC
• Turn-On Energy Losses 23 microJoules (typical).

All devices are 100% tested to full voltage/current ratings and housed in Halogen-Free, RoHS compliant industry-standard SOT-227 packages. The devices are immediately available from GeneSiC’s Authorized Distributors.

About GeneSiC Semiconductor Inc.

GeneSiC Semiconductor Inc. is a leading innovator in high-temperature, high-power and ultra-high-voltage silicon carbide (SiC) devices, and global supplier of a broad range of power semiconductors. Its portfolio of devices includes SiC-based rectifier, transistor, and thyristor products, as well as Silicon rectifier products. GeneSiC has developed extensive intellectual property and technical knowledge that encompasses the latest advancements in SiC power devices, with products targeted towards alternative energy, automotive, down ole oil drilling, motor control, power supply, transportation, and uninterruptible power supply applications. GeneSiC has obtained numerous research and development contracts from US Government agencies, including the ARPA-E, Department of Energy, Navy, Army, DARPA, DTRA, and the Department of Homeland Security, as well as major government prime contractors. In 2011, the company won the prestigious R&D100 award for commercializing ultra-high voltage SiC Thyristors.

For more information, please visit www.genesicsemi.com