GeneSiC introduces Silicon Carbide Junction Transistors

Industry’s Most Compelling SiC Switch Solution for High Frequency and High Temperature Applications

Dulles, Virginia., Feb. 25, 2013  – GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of a family of 1700V and 1200 V SiC Junction Transistors. Incorporating high voltage, high frequency and high-temperature capable SiC Junction Transistors will increase conversion efficiency and reduce the size/weight/volume of power electronics. These devices are targeted for use in a wide variety of applications including server, telecom and networking power supplies, uninterruptable power supplies, solar inverters, industrial motor control systems, and downhole applications.

Junction Transistors offered by GeneSiC exhibit ultra-fast switching capability, a square reverse biased safe operation area (RBSOA), as well as temperature-independent transient energy losses and switching times. These switches are gate-oxide free, normally-off, exhibit positive temperature co-efficient of on-resistance, and are capable of being driven by commercial, commonly available 15 V IGBT gate drivers, unlike other SiC switches. While offering compatibility with SiC JFET drivers, Junction Transistors can be easily paralleled because of their matching transient characteristics.

“As power system designers continue to push the limits of operating frequency, while still demanding high circuit efficiencies, the need SiC switches which can offer a standard of performance and production uniformity. Utilizing the unique device and fabrication innovations, GeneSiC’s Transistor products help designers achieve all that in a more robust solution,” said Dr. Ranbir Singh, President of GeneSiC Semiconductor.

1700 V Junction Transistor Technical Highlights

• Three offerings – 110 mOhms (GA04JT17-247); 250 mOhms (GA08JT17-247); and 500 mOhms (GA16JT17-247)
• T_jmax = 175^oC
• Turn On/Off Rise/Fall Times <50 nanoseconds typical.

1200 V Junction Transistor Technical Highlights

• Two offerings – 220 mOhms (GA06JT12-247); and 460 mOhms (GA03JT12-247)
• T_jmax = 175^oC
• Turn On/Off Rise/Fall Times <50 nanoseconds typical

All devices are 100% tested to full voltage/current ratings and housed in Halogen-Free, RoHS compliant TO-247 packages. The devices are immediately available from GeneSiC’s Authorized Distributors.

About GeneSiC Semiconductor Inc.

GeneSiC Semiconductor Inc. is a leading innovator in high-temperature, high-power and ultra-high-voltage silicon carbide (SiC) devices, and global supplier of a broad range of power semiconductors. Its portfolio of devices includes SiC-based rectifier, transistor, and thyristor products, as well as Silicon rectifier products. GeneSiC has developed extensive intellectual property and technical knowledge that encompasses the latest advancements in SiC power devices, with products targeted towards alternative energy, automotive, down ole oil drilling, motor control, power supply, transportation, and uninterruptible power supply applications. GeneSiC has obtained numerous research and development contracts from major US Government agencies, including the ARPA-E, Department of Energy, Navy, Army, DARPA, DTRA, and the Department of Homeland Security, as well as major government prime contractors. In 2011, the company won the prestigious R&D100 award for commercializing ultra-high voltage SiC Thyristors.

For more information, please visit www.genesicsemi.com