UCSB team designs CMOS-compatible graphene interconnects
Researchers from the University of California, Santa Barbara, will be presenting a paper focused on CMOS-compatible graphene interconnects next month at the world-renowned semiconductor-technology conference – the IEEE International Electron Devices Meeting (Dec. 1-5 in San Francisco).
The team has shown that integrating graphene into the interconnect scheme holds the promise of increasing performance and limiting power consumption in next-generation CMOS ICs, as graphene offers high conductivity and is not prone to electromigration.
Source: https://www.graphene-info.com/ucsb-team-designs-cmos-compatible-graphene-interconnects
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